| PART |
Description |
Maker |
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| 1N5943A 1N5929A 1N5937A 1N5949A 1N5950A 1N5930A 1N |
POWER DISSIPATION: 1.5W
|
Shenzhen Luguang Electronic Technology Co., Ltd
|
| KTC601U |
Power dissipation: PC=200mW
|
TY Semiconductor Co., Ltd
|
| FMMT720 FMMT723 |
625mW POWER DISSIPATION
|
TAIWAN SHIKE ELECTRONIC HOLDINGS LIMITED
SK Electronics
|
| 2SB766A |
Large collector power dissipation PC
|
MAKO SEMICONDUCTOR CO.,...
|
| BUZ84 |
SOA is Power Dissipation Limited
|
Inchange Semiconductor ...
|
| KTA1273 |
Collector Power Dissipation: PC=500mW
|
TY Semiconductor Co., Ltd
|
| BUZ83A |
SOA is Power Dissipation Limited
|
Inchange Semiconductor ...
|
| BAS16T |
Power dissipation (Ta mb=25 ) PD 150 mW Forward Current IF 75 mA
|
TY Semiconductor Co., Ltd
|
| STD03N |
High collector power dissipation: Pc=160W
|
Sanken electric
|
| FCX790A |
2W power dissipation, 6A peak pulse current
|
TY Semiconductor Co., Ltd
|
